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Characterization of p-Type NiO_x Deposited by Low Power Sputtering

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Low-Pressure, Modified Halide Vapor-Phase Epitaxy for Chemically Pure GaN Epilayers

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Toward High-Throughput Deposition of III-V Materials and Devices using Halide Vapor Phase Epitaxy

Ptak et al. Proc SPIE 12881, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XIII, 1288102 (8 Mar 2024).

Ultra-Wide Band Gap Ga₂O₃-on-SiC MOSFETs

Song et al. ACS Applied Materials & Interfaces, 15, 7137 (2023).