2025

Kyma and Novel Crystal Technology announce strategic collaboration to advance gallium oxide epitaxial wafers.

2024

Kyma is awarded the only ME Commons project focused on Ga2O3, through the CLAWS Hub.

2023

The Commercial Leap Ahead for Wide-bandgap Semiconductors (CLAWS) Microelectronics (ME) Commons Hub is funded, with Kyma as a primary member.

2021

Kyma begins offering PureGaN™ epiwafers for vertical GaN devices.

2019

Kyma adds UV Grade AlN on Sapphire Templates to its product line. Heather Splawn transitions to the President & CEO role, while Keith Evans transitions to Chief Strategy Officer.

2018

Kyma adds gallium oxide (Ga2O3) substrates to its product line and demonstrates Ga2O3 epilayer mobilities above 100 cm-V/s. Gregg Dodson is promoted to Chief Engineer and elected to Kyma's Board of Directors. Jacob Leach transitions from Chief Science Officer to Chief Technical Officer.

2017

Kyma develops industry's first 200-mm HVPE growth tool for producing crystalline GaN, AlN, AlGaN, and Ga2O3 materials. Kyma demonstrates high-quality 200-mm GaN HVPE growth on QST® substrates provided by Qromis, Inc.

2016

Kyma  adds HVPE gallium oxide (Ga2O3) epiwafers to its product line.

2014

Kyma extends its GaN growth capabilities to 6" diameter.  Kyma extends its GaN photoconductive semiconductor switch (PCSS) materials and device technology.

2013

Jacob Leach is promoted to become Kyma's Chief Science Officer (CSO). Kyma demonstrates KO-Switch™ reliability showing negligible performance change after one million switching events.  

2012

Kyma demonstrates 10-inch diameter PVDNC™ AlN templates on sapphire and 12-inch diameter PVDNC™ AlN on silicon templates. Kyma signs sales distribution agreements with leading agents in the Republic of Korea.

2011

Heather Splawn named Triangle Mover & Shaker and becomes Kyma COO. Kyma CEO Keith Evans named Triangle Top 50 Entrepreneur. Veeco partners with Kyma in US DOE project to develop PVD equipment for LED manufacturing. Kyma achieves record performance high speed high power GaN photoconductive semiconductor switch (PCSS) device.

2010

Kyma acquires select assets of The Fox Group including physical and IP assets in HVPE growth of full device epiwafers. Kyma is named North Carolina Company to Watch. Kyma launches AlGaN template product line.

2008

Kyma signs sales distribution agreements with leading agents in Japan, Taiwan, and Europe.

2007

Kyma adds polycrystalline GaN to its product line and extends the size of its bulk single crystal GaN substrate product offering.

2006

Kyma launches AlN and GaN template product line and adds nonpolar bulk GaN to its bulk GaN product line. Auburn University researchers demonstrate 600V Schottky barrier diode using Kyma's bulk GaN substrate.

2005

Kyma expands its bulk GaN substrate product offering to include customer-specified orientations, including both a-plane and m-plane non-polar GaN.

2004

Kyma closes on C-round financing in support of continued development of boule-based crystalline GaN substrates.

2003

Kyma closes on B-round financing and is named Early Stage Company of the Year by North Carolina Technology Association (then known as NCEITA).

2001

Kyma closes on its A-round of equity financing to support development of crystalline III-N materials and associated equipment and growth processes.

2000

The company changes its name to Kyma Technologies, Inc.

1998

Carolina Sputter Solutions is started by NCSU Materials Science & Engineering Professor Jerome Cuomo and his graduate student Mark Williams. The company takes exclusive license to NCSU patents in the technology space of plasma vapor deposition (PVD) of crystalline GaN, AlN, and other III-N materials.