Kyma Technologies, Inc., a leading developer of advanced wide bandgap semiconductor materials technologies, today announced its participation in the2016 2nd AFRL Workshop on ß-Ga2O3: Synthesis, Characterization, and Applications.
The invitation only workshop had a stated purpose “to provide a focused forum to examine the present state of ß-Ga2O3 materials and devices and to identify the scientific gaps and challenges to be overcome in order to realize the full potential of this material system. Technical leaders in modeling, material synthesis, material characterization, device fabrication, and applications will be assembled to identify research pathways leading to defining the full application space of ß-Ga2O3 materials through scientific breakthroughs.”
The fundamental physical properties of ß-Ga2O3 coupled with recent advances in bulk ß-Ga2O3 substrate technology have led to exciting homoepitaxial ß-Ga2O3 device results reported in leading laboratories around the world. Yet the epitaxial growth technology for creating device layers on top of the substrate is still in the early stages of development, with three competing approaches emerging for potential downstream commercialization: molecular beam epitaxy (MBE), metalorganic chemical vapor deposition (MOCVD), and hydride vapor phase epitaxy (HVPE).
While the strengths and limitations of each epitaxial growth approach are still being explored, Professor Masataka Higashiwaki of the National Institute of Information and Communications Technology (Tokyo, Japan), who has been called the Father of Gallium Oxide, stated during his plenary talk that “HVPE technology holds the most promise for epitaxy of ß-Ga2O3 for power electronics applications.”
Later in that same session of the workshop, Kyma’s Chief Science Officer, Jacob Leach, presented a talk entitled “HVPE Capabilities and Ga2O3 Growth Tool Development” in which he summarized recent advances at Kyma in developing a high growth rate HVPE tool for producing Ga2O3 epitaxial wafers for advanced power electronics and RF device applications.
Dr. Leach commented, “It was an exciting workshop and we are honored to be a part of the growing community of researchers working hard to understand the potential of Ga2O3 materials to support next generation volume commercial applications as well as certain niche applications.”
In March of 2016 Kyma announced the addition of Ga2O3 epiwafers to its product line.
For more information about Kyma’s ß-Ga2O3 materials technology and product offerings, contact the company at sales@kymatech.com or call the company directly at +1 919.789.8880.
Kyma’s mission is to provide advanced materials solutions that promote energy efficiency. Kyma’s products include a diverse portfolio of advanced crystalline materials (including GaN, AlN, AlGaN, Ga2O3, and MoS2), crystal growth tools for fabricating such materials, and GaN-based photoconductive semiconductor switch (PCSS) devices.
For more information about Kyma, visit www.kymatech.com, send an email to info@kymatech.com, or call the company directly at +1 919.789.8880.
