Kyma Technologies, Inc., a leading developer of advanced wide bandgap semiconductor materials technologies, today announced its recent advances in crystalline gallium oxide (Ga2O3) materials technology.
Crystalline gallium oxide (Ga2O3) is an exciting new material with a wide and direct bandgap and other properties including the ability to be grown by conventional liquid phase techniques that give it great promise to support a number of next generation electronic and optoelectronic device technologies.
Kyma first announced the addition of ß-Ga2O3 homoepitaxial epiwafers to its product line in March 2016. Since then Kyma has shipped a number of undoped and doped homoepitaxial ß-Ga2O3 epiwafers to leading R&D groups pursuing next generation devices.
More recently Kyma has experienced growing interest in heteroepitaxial Ga2O3 epiwafers, meaning they are not grown on a Ga2O3 substrate - they include ß-Ga2O3 grown on non-ß-Ga2O3 substrates and also other polytypes such as α-Ga2O3 epilayers grown upon sapphire (α-Al2O3) substrates.
Along the way, Kyma has made several scientific and engineering advances to better understand how to optimize these materials. In homoepitaxial growth of ß-Ga2O3 epiwafers, Kyma has learned how to prepare ß-Ga2O3 substrates for supporting high quality overgrowth. This includes the development of CMP processes for proper removal of all subsurface damage and substrate miscut control processes to ensure high quality overgrowth. Kyma has found that relatively straight-forward x-ray diffraction (XRD) measurement results are affected by the presence of subsurface damage and thus XRD is an important tool for feedback to the CMP optimization process. Additional correlations with substrate photoluminescence properties are under study in a close collaboration between Kyma and scientists at Argonne National Laboratory.
Kyma will present an update of some of recent company advances in the growth and characterization of Ga2O3 epiwafers at the upcoming 32nd International Conference on Compound Semiconductor Manufacturing Technology (CS ManTech). Kyma's paper is led by Chief Science Officer Jacob Leach and is co-authored by several colleagues at Air Force Research Laboratory (AFRL) Sensors Directorate and Northrop-Grumman Synoptics, and is entitled "Development of Homoepitaxial Growth of β-Ga2O3 by Hydride Vapor Phase Epitaxy."
Kyma plans to publish details about its advances in both homoepitaxial and heteroepitaxial Ga2O3 materials and in regular product page updates - feel free to contact us at sales@kymatech.com or via our web site at anytime to discuss your interests.
Please visit Kyma's Gallium Oxide Epiwafers product page and Wafer Fabrication services page for more information about these products and services.
Kyma’s mission is to provide advanced materials solutions that promote energy efficiency. Kyma’s products include a diverse portfolio of advanced crystalline materials(including GaN, AlN, AlGaN, Ga2O3, and MoS2), crystal growth tools for fabricating such materials, and GaN-based photoconductive semiconductor switch (PCSS) devices. Kyma's growing service offering includes specialty parts manufacturing, device processing, materials characterization, wafer fabrication, and federal contract consulting services.
For more information about Kyma, visit www.kymatech.com, send an email to info@kymatech.com, or call the company directly at +1 919.789.8880.
