Kyma Technologies, Inc., a leading developer of advanced wide bandgap semiconductor materials technologies, is pleased to announce it has commissioned its K200™ hydride vapor phase epitaxy (HVPE) growth tool.
Kyma's newly constructed K200™ HVPE tool represents a first for the industry and was designed by Kyma engineers to enable uniform and rapid growth of high quality GaN on a number of different substrates. HVPE has several advantages over metalorganic chemical vapor deposition (MOCVD) including faster growth rates, lower cost starting materials, and a higher purity growth environment aided by the use of elemental group III sources instead of carbon containing metalorganic sources. As a result, HVPE enables better GaN to be grown more rapidly and at lower cost.
The design of the K200™ HVPE tool leverages over a decade of experience at Kyma in designing tools and developing processes for the application of hydride vapor phase epitaxy (HVPE) growth technology to crystalline wide bandgap semiconductor materials including GaN, AlN, AlGaN, and Ga2O3.
Today's announcement represents a major milestone for Kyma and sets the stage for Kyma to begin testing the materials growth capabilities of its K200™ HVPE tool.
Kyma’s mission is to provide advanced materials solutions that promote energy efficiency. Kyma’s products include a diverse portfolio of advanced crystalline materials (including GaN, AlN, AlGaN, Ga2O3, and MoS2), crystal growth tools for fabricating such materials, and GaN-based photoconductive semiconductor switch (PCSS) devices.
Kyma's growing service offering includes specialty parts manufacturing, device processing, materials characterization, wafer fabrication, and federal contract consulting services.
For more information about Kyma, visit www.kymatech.com, send an email to info@kymatech.com, or call the company directly at +1 919.789.8880.
