Kyma Technologies, Inc., a leading supplier of advanced materials and services, announced today that CEO Heather Splawn will be a key speaker at CS International in Belgium. As a result of Kyma’s development and production of the highest quality Hydride Vapor Phase Epitaxy (HVPE) systems on the market today, Kyma makes some of the world’s best GaN drift layers for vertical device architectures. Vertical GaN electronics have been talked about for years, but have had a hard time leaving the academic setting because of challenges related to substrate cost and availability, expensive and poor-quality drift layers, and p-type regrowth and interface issues. Kyma’s HVPE technology is helping to unlock this technology, and move it closer to the commercial market place. Kyma introduced its drift layer solution, PureGaNTM, early last year and customers have been more than pleased with its quality and cost.
“We are very pleased with the response of PureGaNTM and it is an honor to be invited to speak at CS International,” said Heather Splawn. “CS International is one of the keystone conferences for next generation materials technologies. It is excellent to see the progress GaN is making into the higher-voltage areas. Kyma is very excited to see what applications can be realized with our HVPE technology. Dr. Splawn will talk about the value of HVPE technology, and how it is being utilized for thick, lightly doped drift regions for nascent vertical power device manufacturers.
Kyma’s mission is to provide advanced materials solutions that promote energy efficiency. Kyma’s products include a diverse portfolio of advanced crystalline materials (including GaN, AlN, AlGaN, and Ga2O3), devices, and crystal growth tools for fabricating such materials.
For more information about Kyma, visit www.kymatech.com, send an email to info@kymatech.com, or call the company directly at 919.789.8880.
Kyma is a registered trademark of Kyma Technologies, Inc.
